Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.     

Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff–Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of the stoichiometry of oxygen precipitates by EDX. The results show that both plate‐like oxygen precipitates and a transitional form between plate‐like and octahedral precipi‐ tates consist of SiO₂. This was confirmed by EELS low loss spectra where the typical spectrum for amorphous SiO₂ was observed. Moreover, the absorption band of plate‐like precipitates at 1227 cm^–1 was found in the low temperature FTIR spectrum. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO₂. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Nanotextured multicrystalline Al‐BSF solar cells reaching 18% conversion efficiency using industrially viable solar cell processes

We report recent achievements in adapting industrially used solar cell processes on nanotextured surfaces. Nanostructures were etched into c‐Si surfaces by dry exothermic plasma‐less reaction of F species with Si in atmospheric pressure conditions and then modified using a short post‐etching process. Nanotextured multicrystalline wafers are used to prepare Al‐BSF solar cells using industrially feasible solar cell proc‐ essing steps. In comparison to the reference acidic textured solar cells, the nanostructured cells showed gain in short circuit current (J_sc) of up to 0.8 mA/cm² and absolute gain in conversion efficiency of up to 0.3%. The best nanotextured solar cell was independently certified to reach the conversion efficiency of 18.0%. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

利用多像素光子计数器的光学串话效应提高光子探测效率

通过分析多像素光子计数器(MPPC)的工作原理和其光学串话(OC)效应的特点,提出在使用MPPC输出雪崩信号的幅度或电荷量作为光子计数的参量时,利用MPPC的OC效应能提高MPPC的光子探测效率的观点,并从理论上分析了OC效应对光子探测效率的影响。理论分析结果显示,在这两种光子计数模式下,利用OC效应能明显提高MPPC的光子探测效率。利用本文模型计算得出当MPPC的雪崩单元数M为1 600个,忽略OC效应时的光子探测效率等于30%,光学串话概率等于50%,以及单脉冲入射光子数均值为10时,包含OC效应影响的等效光子探测效率可提高50%,达45%左右。该结果对MPPC在天体物理、粒子物理、荧光光谱探测等弱光探测场合的应用有一定指导意义。     

一种氯苯基硅油的合成及其摩擦磨损性能研究

合成了一种甲基封端、侧基含五氯苯基取代基团的有机聚硅氧烷(CPSO),考察了CPSO的粘温性能、倾点、饱和蒸气压及热稳定性能.采用OptimolSRV型微动摩擦磨损试验机评价了CPSO及空间用润滑油全氟聚醚(PFPE)和磷嗪(X-1P)在常温常压下用于GCr15/CuSn合金摩擦副润滑剂的摩擦磨损性能;采用CZM型真空摩擦试验机评价了3种润滑油在真空条件下用于GCr15/CuSn合金和GCr15/9Cr18摩擦副润滑剂的摩擦磨损性能.结果表明:在真空和常温常压条件下,CPSO的减摩和抗磨损性能均优于PFPE及X-1P;与此同时,CPSO具有极低的饱和蒸气压、很低的热挥发损失以及较好的热稳定性和低温流动性.故其在空间飞行器械运动部件润滑领域具有广泛的应用前景.     

聚乙烯醇及磷酸酯气相润滑下氮化硅的磨损特性研究

采用球－三盘磨损试验机在３７０℃，聚乙烯醇及磷酸三甲苯基酯气相润滑下研究了Ｓｉ３Ｎ４与Ｍ５０工具钢对磨时的磨损特性．结果表明：在气相润滑下聚乙烯醇可以有效地降低Ｓｉ３Ｎ４的磨损；在聚乙烯醇中添加少量的三甲苯基磷酸酯可以进一步降低Ｓｉ３Ｎ４的磨损．Ｘ射线光电子能谱分析发现，Ｓｉ３Ｎ４的摩擦表面形成了主要由元素碳、氧和磷组成的固体润滑膜，Ｓｉ３Ｎ４发生了氧化并生成了ＳｉＯ２和—ＳｉＮＯ等化合物，而三甲苯基磷酸酯则在摩擦过程中发生了降解．     

硅相锌基复合材料减摩抗磨性能的研究

为了改善锌铝合金在干摩擦条件下的耐磨性能，拓宽它的工程应用范围，在其中添加质量分数为１０％的Ｓｉ，同时以质量分数０．１％～０．３％的Ｐ－Ｃｕ对硅相进行变质处理，研制出硅相增强锌基复合材料，并且对这种材料的减摩抗磨性能进行了试验研究．结果表明：硅相锌基复合材料分别在干摩擦和２０＃机械油滴油润滑条件下的减摩抗磨性能良好．扫描电子显微镜观察发现，硅相锌基复合材料中的硅相经变质处理得以细化和分布均匀化，这对改善锌铝合金的综合性能具有重要作用；由于硅相的硬度远比基体的高，在滑动摩擦过程中可以起支撑作用，减少偶件与基体的直接接触而降低摩擦磨损     

陶瓷人工关节的跑合和摩擦性能研究

研究３种生物陶瓷材料（氧化铝，氮化硅和碳化硅）在水中的跑合及其摩擦特性。结果表明：跑合前，氮化硅－氮化硅摩擦副的起始摩擦因数和稳态摩擦因数最高，碳化硅－碳化硅磨擦副的起始摩擦因数和稳态摩擦因数最低，跑合后，氧化铝－氧化铝摩擦副的稳态摩擦因数最高，碳化硅－碳化硅摩擦副的起始摩擦因数和稳态摩擦因数仍然最低。当摩擦副表面均加工到超光洁状态（表面粗糙度Ｒａ为纳米数量级）时，碳化硅－碳化硅摩擦副的摩擦性能最     

含纳米粒子溶液对单晶硅表面的冲蚀磨损损伤实验研究

利用高分辨透射电子显微镜和原子力显微镜观察了含纳米颗粒溶液冲蚀硅片表面损伤行为,考察了纳米颗粒碰撞单晶硅片所导致的微观物理损伤.结果表明:冲蚀30 s后,在高分辨透射电子显微镜下可见硅片表面呈现方向性损伤,并可观察到大量非均匀的晶格缺陷;当冲蚀10 min时,硅片表面出现微观划痕和凹坑,在划痕一端可见原子堆积,亚表面可观察到镶嵌晶粒的非晶损伤层;继续延长冲蚀时间将加剧其表面损伤.